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SIT8008B low power programmable oscillator ow power, standard frequency oscillator features ? any frequency between 1 mhz and 110 mhz accurate to 6 decimal places ? 100% pin - to - pin drop - in replacement to quartz - based xo ? excellent total frequency stability as low as 20 ppm ? operating temperature from - 40c to 85c. for 125c and/ or - 55c options, refer to sit1618 , sit8918 , sit8920 ? low power consumption of 3.5 ma typical at 1.8v ? standby mode for longer battery life ? fast startup time of 5 ms ? lvcmos/hcmos compatible output ? industry - sta ndard packages: 2.0 x 1.6, 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2, 7.0 x 5.0 mm x mm ? instant samples with time machine ii and f ield p rogrammable o scillators ? rohs and reach compliant, pb - free, halogen - free and antimony - free ? for aec - q100 oscillators, refer to sit8924 and sit8925 applications ? ideal for dsc, dvc, dvr, ip cam, tablets, e - books, ssd, gpon, epon, etc . ? ideal for high - speed serial protocols such as: usb, sata, sas, firewire, 100m / 1g / 10g ethernet, etc. electrical characteristics all min and max limits are specified over temperature and rated operating voltage with 15 pf output load unless otherwise stated. typical values are at 25c and nominal supply voltage. table 1 . electrical characteristics parameters symbol min. typ. max. unit condition frequency range output frequency range f 1 C 110 mhz frequency stability and aging frequency stability f_stab - 20 C +20 ppm inclusive of initial tolerance at 2 5c, 1 st year aging at 25c, and variations over operating temperature, rated power supply voltage and load. - 25 C +25 ppm - 50 C +50 ppm operating temperature range operating temperature range t_use - 20 C +70 c extended commercial - 40 C +85 c industrial supply voltage and current consumption supply voltage vdd 1.62 1.8 1.98 v contact sitime for 1.5v support 2.25 2.5 2.75 v 2.52 2.8 3.08 v 2.7 3.0 3.3 v 2.97 3.3 3.63 v 2.25 C 3.63 v current consumption idd C 3.8 4.5 ma no load condition, f = 20 mhz, vdd = 2.8v to 3.3v C 3.7 4.2 ma no load condition, f = 20 mhz, vdd = 2.5v C 3.5 4.1 ma no load condition, f = 20 mhz, vdd = 1.8v oe disable current i_od C C 4.2 ma vdd = 2.5v to 3.3v, oe = gnd, output in high - z state C C 4.0 ma vdd = 1.8v, oe = gnd, output in high - z state standby current i_std C 2.1 4.3 ? a st ? ? ? = gnd, vdd = 2.8v to 3.3v, output is weakly pulled down C 1.1 2.5 ? a st ? ? ? = gnd, vdd = 2.5v, output is weakly pulled down C 0.2 1.3 ? a st ? ? ? = gnd, vdd = 1.8v, output is weakly pulled down rev 1.04 january 30, 2018 www.sitime.com
sit8008 b low power programmable oscillator rev 1.04 page 2 of 17 www.sitime.com table 1. electrical characteristics (continued) parameters symbol min. typ. max. unit condition lvcmos output characteristics duty cycle dc 45 C 55 % all vdds. see duty cycle definition i n figure 3 and foo tn ote 6 rise/fall time tr, tf C 1 2 ns vdd = 2.5v, 2.8v, 3.0v or 3.3v, 20% - 80% C 1.3 2.5 ns vdd =1.8v, 20% - 80% C C 2 ns vdd = 2.25v - 3.63v, 20% - 80% output high voltage voh 90% C C vdd ioh = - 4 ma (vdd = 3.0v or 3.3v) ioh = - 3 ma (vdd = 2.8v and vdd = 2.5v) ioh = - 2 ma (vdd = 1.8v) output low voltage vol C C 10% vdd iol = 4 ma (vdd = 3.0v or 3.3v) iol = 3 ma (vdd = 2.8v and vdd = 2.5v) iol = 2 ma (vdd = 1.8v) input characteristics input high voltage vih 70% C C vdd pin 1, oe or st ? ? ? input low voltage vil C C 30% vdd pin 1, oe or st ? ? ? input pull - up impedance z_in 50 87 150 k ? ? pin 1, oe logic high or logic low, or st ? ? ? logic high 2 C C m ? ? pin 1, st ? ? ? logic low startup and resume timing startup time t_start C C 5 ms measured from the time vdd reaches its rated minimum value enable/disable time t_oe C C 130 ns f = 110 mhz. for other frequencies, t_oe = 100 ns + 3 * cycles resume time t_resume C C 5 ms measured from the time st ? ? ? pin crosses 50% threshold jitter rms period jitter t_jitt C 1.8 3 ps f = 75 mhz, vdd = 2.5v, 2.8v, 3.0v or 3.3v C 1.8 3 ps f = 75 mhz, vdd = 1.8v peak - to - peak period jitter t_pk C 12 25 ps f = 75 mhz, vdd = 2.5v, 2.8v, 3.0v or 3.3v C 14 30 ps f = 75 mhz, vdd = 1.8v rms phase jitter (random) t_phj C 0.5 0.9 ps f = 75 mhz, integration bandwidth = 900 khz to 7.5 mhz C 1.3 2 ps f = 75 mhz, integration bandwidth = 12 khz to 20 mhz table 2 . pin description pin symbol functionality 1 oe/ st ? ? ? /nc output enable h [ 1 ] : specified frequency output l: output is high impedance. only output driver is disabled. standby h [ 1 ] : specified frequency output l: output is low (weak pull down). device goes to sleep mode. supply current reduces to i_std. no connect any voltage between 0 and vdd or open [ 1 ] : specified frequency output. pin 1 has no function. 2 gnd power electrical ground 3 out output oscillator output 4 vdd power power supply voltage [ 2 ] top view figure 1 . pin assignments notes: 1. in oe or st ? ? ? m ode, a pull - up resistor of 10 k or less is recommended if pin 1 is not externally driven. if pin 1 needs to be left floating, use the nc option. 2. a capacitor of value 0.1 f or higher between vdd and gnd is required. oe/st/nc
sit8008 b low power programmable oscillator rev 1.04 page 3 of 17 www.sitime.com table 3 . absolute maximum limits attempted operation outside the absolute maximum ratings may cause permanent damage to the part. actual performance of the ic is only guaranteed within the operational specifications, not at absolute maximum ratings. parameter min. max. unit storage temperature - 65 150 c vdd - 0.5 4 v electrostatic discharge C 2000 v soldering temperature (follow standard pb free soldering guidelines) C 260 c junction temperature [ 3 ] C 150 c note: 3. exceeding this temperature for extended period of time may damage the device. table 4 . thermal consideration [ 4 ] package ? ja, 4 layer board (c/w) ? ja, 2 layer board (c/w) ? jc, bottom (c/w) 7050 142 273 30 5032 97 199 24 3225 109 212 27 2520 117 222 26 2016 152 252 36 note: 4. refer to jesd51 for ? ja and ? jc definitions, and reference layout used to determine the ? ja and ? jc values in the above table. table 5 . maximum operating junction temperature [ 5 ] max operating temperature (ambient) maximum operating junction temperature 70 c 80 c 85 c 9 5c note: 5. datasheet specifications are not guaranteed if junction temperature exceeds the maximum operating junction temperature. table 6 . environmental compliance parameter condition/test method mechanical shock mil - std - 883f, method 2002 mechanical vibration mil - std - 883f, method 2007 temperature cycle jesd22, method a104 solderability mil - std - 883f, method 2003 moisture sensitivity level msl1 @ 260c
sit8008 b low power programmable oscillator rev 1.04 page 4 of 17 www.sitime.com test circuit and waveform [ 6 ] figure 2 . test circuit figure 3 . waveform note: 6. duty cycle is computed as duty cycle = th/period. timing diagrams figure 4 . startup timing (oe/ st ? ? ? mode) figure 5 . standby resume timing ( st ? ? ? mode only) figure 6 . oe enable timing (oe mode only) figure 7 . oe disable timing (oe mode only) note: 7. sit8008 has no runt pulses and no glitch output during startup or resume. p o w e r s u p p l y 1 5 p f ( i n c l u d i n g p r o b e a n d f i x t u r e c a p a c i t a n c e ) t e s t p o i n t v o u t v d d 0 . 1 u f 1 k v d d o e / s t f u n c t i o n 4 3 1 2 8 0 % v d d h i g h p u l s e ( t h ) 5 0 % 2 0 % v d d p e r i o d t f t r l o w p u l s e ( t l ) 9 0 % v d d v d d p i n 4 v o l t a g e c l k o u t p u t t _ s t a r t t _ s t a r t : t i m e t o s t a r t f r o m p o w e r - o f f n o g l i t c h d u r i n g s t a r t u p [ 7 ] h z 5 0 % v d d v d d s t v o l t a g e c l k o u t p u t t _ r e s u m e t _ r e s u m e : t i m e t o r e s u m e f r o m s t h z 5 0 % v d d v d d o e v o l t a g e c l k o u t p u t t _ o e t _ o e : t i m e t o r e - e n a b l e t h e c l o c k o u t p u t h z 5 0 % v d d v d d o e v o l t a g e c l k o u t p u t t _ o e : t i m e t o p u t t h e o u t p u t i n h i g h z m o d e h z t _ o e
sit8008 b low power programmable oscillator rev 1.04 page 5 of 17 www.sitime.com 6.0 5.5 5.0 4.5 4.0 3.5 3.0 0 10 20 30 40 50 60 70 80 90 100 110 frequency (mhz) 20 15 10 5 0 - 5 - 10 - 15 - 20 - 40 - 30 - 20 - 10 0 10 20 30 40 50 60 70 80 temperature (c) dut1 dut6 dut2 dut7 dut3 dut8 dut4 dut9 dut5 dut10 frequency (mhz) performance plots [ 8 ] figure 8 . idd vs frequency figure 9 . frequency vs temperature figure 10 . rms period jitter vs frequency figure 11 . duty cycle vs frequency figure 12 . 20% - 80% rise time vs temperature figure 13 . 20% - 80% fall time vs temperature 1.8 v 2.5 v 2.8 v 3.0 v 3.3 v rms period jitter (ps) 1.8 2.5 2.8 3.0 3.3 idd (ma) frequency (ppm) 1.8 v 2.5 v 2.8 v 3.0 v 3.3 v ty c y c ( 55 54 53 52 51 50 49 48 47 46 45 0 10 20 30 40 50 60 70 80 90 100 110 frequency (mhz) temperature (c) temperature (c)
sit8008 b low power programmable oscillator rev 1.04 page 6 of 17 www.sitime.com performance plots [ 8 ] figure 14 . rms integrated phase jitter random (12 khz to 20 mhz) vs frequency [ 9 ] figure 15 . rms integrated phase jitter random (900 khz to 20 mhz) vs frequency [ 9 ] notes: 8. all plots are measured with 15 pf load at room temperature, unless otherwise stated. 9. phase noise plots are measured with agilent e5052b s ignal source analyzer. integration range is up to 5 mhz for carrier frequencies below 40 mhz. 10 30 50 70 90 110 frequency (mhz) i p j (ps) 1.8 v 2.5 v 2.8 v 3.0 v 3.3 v 0.9 0.8 0.7 0.6 0.5 0.4 10 30 50 70 90 110 frequency (mhz)
sit8008 b low power programmable oscillator rev 1.04 page 7 of 17 www.sitime.com programmable drive strength the sit8008 includes a programmable drive strength feature to provide a simple, flexible tool to optimize the clock rise/fall time for specific applications. benefits from the programmable drive strength feature are: ? improves system radiated electromagnetic interference (emi) by slowing down the clock rise/fall time . ? improves the downstream clock receivers (rx) jitter by decreasing (speeding up) the clock rise/fall time. ? ability to drive large capacitive loads while maintaining full swing wit h sharp edge rates. for m ore detailed information about rise/fall time control and drive strength selection, see the sitime application notes section . emi reduction by slowing rise/fall time figure 16 shows the harmonic power reduction as the rise/fall times are increased (slowed down). the rise/fall times are expressed as a ratio of the clock period. for the ratio of 0.05, the signal is very close to a squ are wave. for the ratio of 0.45, the rise/fall times are very close to near - triangular waveform. these results, for example, show that the 11th clock harmonic can be reduced by 35 db if the rise/fall edge is increased from 5% of the period to 45% of the pe riod. figure 16 . harmonic emi reduction as a function of slower rise/fall time jitter reduction with faster rise/fall time power supply noise can be a source of jitter for the dow n- stream chipset. one way to reduce this jitter is to speed up the rise/fall time of the input clock. some chipsets may also require faster rise/fall time in order to reduce their sensitivity to this type of jitter. refer to the rise/fall time tables (table 7 to table 11) to determine the proper drive strength. high output load capability the rise/fall time of the input clock varies as a function of the actual capacitive load the clock drives. at any gi ven drive strength, the rise/fall time becomes slower as the output load increases. as an example, for a 3.3v sit8008 device with default drive strength setting, the typical rise/fall time is 1 ns for 15 pf output load. the typical rise/fall time slows dow n to 2.6 ns when the output load increases to 45 pf. one can choose to speed up the rise/fall time to 1.83 ns by then increasing the drive strength setting on the sit8008. the sit8008 can support up to 60 pf or higher in maxim u m capacitive loads with drive strength settings. refer to the rise/fall time tables (table 7 to 11) to determine the proper drive strength for the desired combination of output load vs. rise/fall time. sit8008 drive strength selection tables 7 through 11 define the rise/fall time for a given capacitive load and supply voltage. 1. select the table that matches the sit8008 nominal supply voltage (1.8v, 2.5v, 2.8v, 3.0v, 3.3v). 2. select the capacitive loa d column that matches the appli cation requirement (5 pf to 60 pf) 3. under the capacitive load column, select the desired rise/fall times. 4. the left - most column represents the part number code for the corresponding drive strength. 5. add the drive strength code to the part number for ordering purposes. calculating maximum frequency any given rise/fall time in table 7 through 11 dictates the maximum frequency under which the oscillator can operate with guaranteed full output swing over the entire operating temperature range. this max frequency can be calculated as the following: where trf_ 20/80 is the typical value for 20% - 80% rise/fall time. example 1 calculate f max for the following condition: ? vdd = 1.8v ( table 7 ) ? capacitive load: 30 pf ? desired tr/f time = 3 ns (rise/fall time part number code = e) ? f max = 66.666660 part number for the above example: drive strength code is inserted here. default setting is - sit8008i e 12 - 18e - 66.666660 1 3 5 7 9 1 1 - 8 0 - 7 0 - 6 0 - 5 0 - 4 0 - 3 0 - 2 0 - 1 0 0 1 0 h a r m o n i c n u m b e r h a r m o n i c a m p l i t u d e ( d b ) t r i s e = 0 . 0 5 t r i s e = 0 . 1 t r i s e = 0 . 1 5 t r i s e = 0 . 2 t r i s e = 0 . 2 5 t r i s e = 0 . 3 t r i s e = 0 . 3 5 t r i s e = 0 . 4 t r i s e = 0 . 4 5 = 1 5 x t r f _ 2 0 / 8 0 m a x f r e q u e n c y
sit8008 b low power programmable oscillator rev 1.04 page 8 of 17 www.sitime.com rise/fall time (20% to 80%) vs c load tables table 7 . vdd = 1.8v rise/fall times for specific c load table 8 . vdd = 2.5v rise/fall times for specific c load table 9 . vdd = 2.8v rise/fall times for specific c load table 10 . vdd = 3.0v rise/fall times for specific c l oad table 11 . vdd = 3.3v rise/fall times for specific c l oad rise/fall time typ (ns) drive strength \ c load 5 pf 15 pf 30 pf 45 pf 60 pf l 3.39 6.88 11.63 17.56 23.59 a 1.74 3.50 6.38 8.98 12.19 r 1.16 2.33 4.29 6.04 8.34 b 0.81 1.82 3.22 4.52 6.33 t or "\": default 0.46 1.00 1.86 2.60 3.84 e 0.33 0.87 1.64 2.30 3.35 u 0.28 0.79 1.46 2.05 2.93 f 0.25 0.72 1.31 1.83 2.61 rise/fall time typ (ns) drive strength \ c load 5 pf 15 pf 30 pf 45 pf 60 pf l 3.77 7.54 12.28 19.57 25.27 a 1.94 3.90 7.03 10.24 13.34 r 1.29 2.57 4.72 7.01 9.06 b 0.97 2.00 3.54 5.43 6.93 t 0.55 1.12 2.08 3.22 4.08 e or "\": default 0.44 1.00 1.83 2.82 3.67 u 0.34 0.88 1.64 2.52 3.30 f 0.29 0.81 1.48 2.29 2.99 rise/fall time typ (ns) drive strength \ c load 5 pf 15 pf 30 pf 45 pf 60 pf l 3.60 7.21 11.97 18.74 24.30 a 1.84 3.71 6.72 9.86 12.68 r 1.22 2.46 4.54 6.76 8.62 b 0.89 1.92 3.39 5.20 6.64 t or "\": default 0.51 1.00 1.97 3.07 3.90 e 0.38 0.92 1.72 2.71 3.51 u 0.30 0.83 1.55 2.40 3.13 f 0.27 0.76 1.39 2.16 2.85 rise/fall time typ (ns) drive strength \ c load 5 pf 15 pf 30 pf 45 pf 60 pf l 6.16 11.61 22.00 31.27 39.91 a 3.19 6.35 11.00 16.01 21.52 r 2.11 4.31 7.65 10.77 14.47 b 1.65 3.23 5.79 8.18 11.08 t 0.93 1.91 3.32 4.66 6.48 e 0.78 1.66 2.94 4.09 5.74 u 0.70 1.48 2.64 3.68 5.09 f or "\": default 0.65 1.30 2.40 3.35 4.56 rise/fall time typ (ns) drive strength \ c load 5 pf 15 pf 30 pf 45 pf 60 pf l 4.13 8.25 12.82 21.45 27.79 a 2.11 4.27 7.64 11.20 14.49 r 1.45 2.81 5.16 7.65 9.88 b 1.09 2.20 3.88 5.86 7.57 t 0.62 1.28 2.27 3.51 4.45 e or "\": default 0.54 1.00 2.01 3.10 4.01 u 0.43 0.96 1.81 2.79 3.65 f 0.34 0.88 1.64 2.54 3.32
sit8008 b low power programmable oscillator rev 1.04 page 9 of 17 www.sitime.com pin 1 configuration optio ns (oe , st ? ? ? , or nc) pin 1 of the sit8008 can be factory - programmed to support three modes: output enable (oe), s tandb y ( st ? ? ? ) or no connect (nc). these modes can also be programmed with the time machine using field programmable devices . output enable (oe) mode in the oe mode, applying logic low to the oe pin only disables the output driver and puts it in hi - z mode. the core of the device continues to operate normally. power consumption is reduced due to the inactivity of the output. when the oe pin is pulled high, the output is typically enabled in <1 s. standby ( st ? ? ? ) mode in the st ? ? ? mode, a device enters into the standby mode when pin 1 pulled low. all internal circuits of the device are turned off. the current is reduced to a standby current, typically in the range of a few a. when st ? ? ? is pulled high, the device goes through the resume process, which can take up to 5 ms. no connect (nc) mode in the nc mode, the device always operates in its normal mode and outputs the specified frequency regardless of the logic level on pin 1. table 12 below summarizes the key relevant par ameters in t he operation of the device in oe, st ? ? ? , or nc mode. table 12 . oe vs. st ? ? ? vs. nc oe st ? ? ? nc active current 20 mhz (max, 1.8v) 4.1 ma 4.1 ma 4.1 ma oe disable current (max. 1.8v) 4 ma n/a n/a standby current (typical 1.8v) n/a 0.6 a n/a oe enable time at 77.76 mhz (max) 138 ns n/a n/a resume time from standby (max, all frequency) n/a 5 ms n/a output driver in oe disable/standby mode high z weak pull - down n/a output on startup and resume the sit8008 comes with gated output. its clock output is accurate to the rated frequency stability within the first pulse from initial device startup or resume from the standby mode. in addition, the sit8008 features no runt pulses and no glitch output during startup or resume as shown in the waveform captures in figure 17 and figure 18 . figure 17 . startup waveform vs. vdd figure 18 . startup waveform vs. vdd (zoomed - in view of figure 17) instant samples with time machine and field programmable oscillators sitime supports a field programmable version of the sit8008 low power oscillator for fast prototyping and real time customization of features. the field programmable devices (fp devices) are available for all five standard sit8008 package sizes and can be configured to ones exact specification using the time machine ii , a n usb powered mems oscillator programmer. customizable features of the sit8008 fp devices include ? frequency between 1 mhz to 110 mhz ? th ree frequency stability options, 20 ppm, 25 ppm, 50 ppm ? two operating temperatures , - 20 to 70c or - 40 to 85c ? six supply voltage options, 1.8v, 2.5v, 2.8v, 3.0v, 3.3v and 2.25 to 3.63v continuous ? output drive strength ? oe, st ? ? ? or nc mode for more information regarding sitimes field programmable solutions, see time machine ii and field programmable oscillators . sit8008 is typically factory - programmed per customer ordering codes for volume delivery.
sit8008 b low power programmable oscillator rev 1.04 page 10 of 17 www.sitime.com dimensions and patterns package size C dimensions (unit: mm) [ 10 ] recommended land pattern (unit: mm) [ 11 ] 2.0 x 1.6 x 0.75 mm 2.5 x 2.0 x 0.75 mm 3.2 x 2.5 x 0.75 mm 5.0 x 3.2 x 0.75 mm 2 . 5 0 . 0 5 2 . 0 0 . 0 5 1 . 1 1 . 0 0 0 . 7 5 0 . 5 0 . 7 5 0 . 0 5 y x x x x # 1 # 2 # 4 # 3 # 2 # 1 # 3 # 4 1 . 9 1 . 1 1 . 0 1 . 5 3 . 2 0 . 0 5 2 . 5 0 . 0 5 2 . 1 0 . 9 0 . 7 0 . 9 0 . 7 5 0 . 0 5 # 1 # 2 # 4 # 3 # 2 # 1 # 3 # 4 y x x x x 2 . 2 1 . 9 1 . 4 1 . 2 5 . 0 0 . 0 5 3 . 2 0 . 0 5 2 . 3 9 0 . 8 1 . 1 5 1 . 1 0 . 7 5 0 . 0 5 # 1 # 2 # 4 # 3 # 2 # 1 # 3 # 4 y x x x x 2 . 5 4 1 . 5 1 . 6 2 . 2
sit8008 b low power programmable oscillator rev 1.04 page 11 of 17 www.sitime.com d imensions and patterns package size C dimensions (unit: mm) [ 10 ] recommended land pattern (unit: mm) [ 11 ] 7.0 x 5.0 x 0.90 mm n otes: 10. top marking: y denotes manufacturing origin and xxxx denotes manufacturing lot number. the value of y will depend on the as sembly location of the device. 11. a capacitor of value 0.1 f or higher between vdd and gnd is required. 1 . 4 1 . 1 y x x x x 5 . 0 0 . 0 5 0 . 9 0 0 . 1 0 7 . 0 0 . 0 5 5 . 0 8 2 . 6 2 . 2 2 . 0 5 . 0 8 3 . 8 1
sit8008 b low power programmable oscillator rev 1.04 page 12 of 17 www.sitime.com o rdering information the part no. guide is for reference only. to customize and build an exact part number, use the sitime part number generator . table 13 . ordering codes for supported tape & reel packing method device size (mm x mm) 16 mm t&r (3ku) 16 mm t&r (1ku) 12 mm t&r (3ku) 12 mm t&r (1ku) 8 mm t&r (3ku) 8 mm t&r (1ku) 2.0 x 1.6 C C C C d e 2.5 x 2.0 C C C C d e 3.2 x 2.5 C C C C d e 5.0 x 3.2 C C t y C C 7.0 x 5.0 t y C C C C packing method supply voltage revision letter temperature range al, - 20oc to package size frequency stability sit80 08 b c - 12 - 18e - 6 6.666660d
sit8008 b low power programmable oscillator rev 1.04 page 13 of 17 www.sitime.com table 14 . additional information d ocument description download link time machine ii mems oscillator programmer http://www.sitime.com/support/time - machine - oscillator - programmer field programmable oscillators devices that can be programmable in the field by time machine ii http://www.sitime.com/products/field - programmable - oscillators manufacturing notes tape & reel dimension, reflow profile and other manufacturing related info http://www.sitime.com/manufacturing - notes qualification reports rohs report, reliability reports, composition reports http://w ww.sitime.com/support/quality - and - reliability performance reports additional performance data such as phase noise, current consumption and jitter for selected frequencies ht tp:// www.sitime.com/support/performance - measurement - report termination techniques termination design recommendations http://www.sitime.com/support/application - notes layout techniques layout recommendations http://www.sitime.com/support/application - notes table 15 . revision history revision release date change summary 1.0 0 6/10/ 20 14 first production release 1.01 0 5/07/ 20 15 revised the electrical characteristics, timing diagrams and performance plots revised 2016 package diagram 1.02 0 6/18/ 20 15 added 16 mm t& r information to table 13 revised 12 mm t&r information to table 13 1.03 0 8/30/ 20 16 revised part number example in the ordering information 1.04 01/30/2018 updated logo and company address, other page layout changes revised 2520 package land pattern sitime corporation , 5451 patrick henry drive , santa clara , ca 95054 , usa | phone: + 1 - 408 - 328 - 4400 | fax: +1 - 408 - 328 - 4439 ? sitime corporation 201 4 - 201 8 . the information contained herein is subject to change at any time without notice. sitime assumes no responsibility or liability f or any loss, damage or defect of a product which is caused in whole or in part by (i) use of any circuitry other than circuitry emb odied in a sitime product, (ii) misuse or abuse including static discharge, neglect or accident, (iii) unauthorized modification or repairs which have been soldered or alte red during assembly and are not capable of being tested by sitime under its normal test conditions, or (iv) improper installation, storage, handling, warehousing or transportation, or (v) being subjected to unusual physical, the rmal, or electrical stress. disclaimer: sitime makes no warranty of any kind, express or implied, with regard to this material, and specifically disclaims any and all express or implied warranties, either in fact or by operation of law, statutory or otherwise, including the implied warranties of merchantability and fitness for use or a particular purpose, and any implied warranty arising from course of dealing or usage of trade, as well as any common - law duties relating to accuracy or lack of negligence, with respect to this material, any sitime product and any product documentation. products sold by sitime are not suitable or intended to be used in a life support application or component, to operate nuclear facilities, or in other mission critical applications where human life may be involved or at stake. all sales are made conditioned upon compliance with the critical uses policy set forth below. critical use exclusion policy buyer agrees not to use sitime's products for any application or in any components used in life support devices or to operate nuclear facilities or for use in other mission - critical appli cations or components where human life or property may be at stake. sitime owns all rights, title and interest to the intellectual property related to sitime's products, including any software, firmware, copyright, patent, or trademark. the sale of sitime products does not convey or imply any license under patent or other rights. sitime retains the copyright and trademark rights in all documents, catalogs and pl ans supplied pursuant to or ancillary to the sale of products or services by sitime. unless otherwise agreed to in writing by sitime, any reproduction, modification, translation, compilation, or representation of this material shall be strictly prohibited.
silicon mems outperforms quartz rev 1.04 page 14 of 17 www.sitime.com supplemental information the supplemental information section is not part of the datasheet and is for informational purposes only.
silicon mems outperforms quartz rev 1.04 page 15 of 17 www.sitime.com best reliability silicon is inherently more reliable than quartz. unlike quartz suppliers, sitime has in - house mems and analog cmos expertise, which allows sitime to develop the most reliable products. figure 1 shows a comparison wit h quartz technology. why is sitime best in class: ? sitimes mems resonators are vacuum sealed using an advanced episeal? process, which eliminates foreign particles and improves long term aging and reliability ? world - class mems and cmos design expertise figure 1 . reliability comparison [1] best aging unlike quartz, mems oscill ators have excellent long term aging performance which is why every new sitime product specifies 10 - year aging. a comparison is shown in figure 2 . why is sitime best in class: ? sitimes mems resonators are vacuum sealed using an advanced episeal? process, which eliminates foreign particles and improves long term aging and reliability ? inherently better immunity of electrostatically driven mems resonator figure 2 . aging comparison [2] best electro magnetic susceptibility (ems) sitimes oscillators in plastic packages are up to 54 times more immune to external electromagnetic fields than quartz oscillators as shown in figure 3 . why is sitime best in class: ? internal differential architecture for bes t common mode noise rejection ? electrostatically driven mems resonator is more immune to ems figure 3 . electro magnetic susceptibility (ems) [3] best power supply noise rejection sitimes mems oscillators are more resilient against noise on the power supply. a comparison is shown in figure 4 . why is sitime best in class: ? on - chip regulators and internal differential architecture for common mode noise rejection ? mems resonator is paired with advanced analog cmos ic figure 4 . power supply noise rejection [4] 2 8 3 8 1 , 1 4 0 e p s n i d t s i t i m e r e l i a b i l i t y ( m i l l i o n h o u r s ) s i t i m e o s c i l l a t o r q u a r t z o s c i l l a t o r 1.5 3.5 3 8 0 2 4 6 8 10 1-year 10-year aging ( ppm) mems vs. quartz aging episeal mems oscillator quartz oscillator s i t i m e s l a b k y c a c w e p s n t x c s i t i m e k y c a e p s n
silicon mems outperforms quartz rev 1.04 page 16 of 17 www.sitime.com best vibration robustness high - vibration en vironmen ts are all around us. all electro nic s, from handheld devices to enterprise servers and storage systems are subject to vibration. figure 5 shows a comparison of vibration robustness. why is sitime best in class: ? the moving mass of sitimes mems resonators is up to 3000 times smaller than quartz ? center - anchored mems resonator is the most robust design figure 5 . vibration robustness [5] best shock robustness sitimes oscillators can withstand at least 50,000 g shock. they all maintain their electrical performance in operation during shock events. a comparison with quartz devices is shown in figure 6 . why is sitime best in class: ? the moving mass of sitimes mems resonators is up to 3000 times smaller than quartz ? center - anchored mems resonator is the most robust design figure 6 . shock robustness [6] figure labels: ? txc = txc ? epson = epsn ? connor winfield = cw ? kyocera = kyca ? silabs = slab ? sitime = episeal mems s i t i m e s l a b k y c a c w e p s t x c 0.0 0.1 1.0 10.0 100.0 10 100 1000 vibration sensitivity (ppb/g) vibration frequency (hz) txc eps cw kyca slab episeal mems s i t i m e s l a b k y c a c w e p s n t x c
silicon mems outperforms quartz rev 1.04 page 17 of 17 www.sitime.com notes: 1. data source: reliability docu ments of named companies. 2. data source: sitime and quartz oscillator devices datasheets. 3. test conditions for electro magnetic susceptibility (ems): ? according to iec en61000 - 4.3 (electromagnetic compatibility standard) ? field strength: 3v/m ? radiated signal modulation: am 1 khz at 80% depth ? carrier frequency scan: 80 mhz C 1 ghz in 1% steps ? antenna polarization: vertical ? dut position: center aligned to antenna devices used in this test: label manufacturer part number technology episeal mems sitime sit9120ac - 1d2 - 33e156.250000 mems + pll epsn epson eg - 2102ca156.2500m - phpal3 quartz, saw txc txc bb - 156.250mbe - t quartz, 3 rd overtone cw conner winfield p123 - 156.25m quartz, 3 rd overtone kyca avx kyocera kc7050t156.250p30e00 quartz, saw slab silab 590ab - bdg quartz, 3 rd overtone + pll 4. 50 mv pk - pk sinusoidal voltage. devices used in this test: label manufacturer part number technology episeal mems sitime sit8208ai - 33 - 33e - 25.000000 mems + pll ndk ndk nz2523sb - 25.6m quartz kyca avx kyocera kc2016b25m0c1ge00 quartz epsn epson sg - 310scf - 25m0 - mb3 quartz 5. devices used in this test: same as ems test stated in note 3. 6. test conditions for shock test: ? mil - std - 883f method 2002 ? condition a: half sine wave shock pulse, 500 - g, 1ms ? continuous frequency measurement in 100 s gate time for 10 seconds devices used in this test: same as ems test stated in note 3. 7. additional data, including setup and detailed results, is available upon request to qualified customer. please contact pro d u ctsupp or t@sitime.com .

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